MBR10125CT features metal of silicon rectifier,majority carrier conduct on guard ring for transient protection low power loss, high efficiency high current capability, low vf high surge capacity plastic package has ul flammability classification 94v-0 mechanical data case : to-220ab molded plastic polarity : as marked on the body weight : 0.08 ounces, 2.24 grams mounting position : any max. mounting torque = 0.5 n.m (5.1 kgf.cm) to-220ab all dimensions in millimeter to-220ab dim. min. max. ac d e f g h b 14.22 15.88 10.67 9.65 2.54 3.43 6.86 5.84 8.26 9.28 - 6.35 12.70 14.73 0.51 2.79 n m l k j i 1.14 2.29 0.64 0.30 3.53 4.09 3.56 4.83 1.14 1.40 2.92 2.03 pin 1 pin 3 pin 2 case a b c k j i h g f e d n m l h pin 1 3 2 schottky barrier rectifiers reverse voltage - 125 volts forward current - 10 amperes semiconductor lite-on maximum ratings and electrical characteristics ratings at 25 ambient temperature unless otherwise specified. single phase, half wave, 60hz, resistive or inducti ve load. for capacitive load, derate current by 20% v rms v dc v rrm i (av) i fsm maximum average forward rectified current (see fig.1) peak forward surge current 8.3ms single half sine-wave superimposed on rated load maximum recurrent peak reverse voltage maximum rms voltage maximum dc blocking voltage 10 120 t j operating temperature range -65 to +175 t stg storage temperature range -65 to +175 typical thermal resistance (note 2) r 0jc 3.0 c/w a a v unit v v characteristics symbol v f v i r maximum dc reverse current at rated dc blocking voltage @t j =125 c @t j =25 c 82 ua ma t c =105 c maximum forward voltage (note 1) i f =5a @ i f =5a @ i f =10a @ i f =10a @ t j =125 c t j =25 c t j =125 c t j =25 c MBR10125CT 125 87.5 125 voltage rate of change (rated vr) dv/dt 10000 v/us 0.92 0.75 1.00 0.85 typical junction capacitance per element (note 3) c j 300 notes : 1. 300us pulse width, 2% duty cycle. 2. thermal resistance junction to ca se. 3. measured at 1.0mhz and applied re verse voltage of 4.0v dc. pf rev. 1, aug-2007, kthc40
rating and characteristic curves MBR10125CT 100 150 200 250 50 0.01 0.1 1 10 fig.3 - typical reverse characteristics reverse voltage , volts instantaneous reverse current , (ma) 0.001 100 0 t j =125 t j =25 capacitance , (pf) reverse voltage , volts fig.5 - typical junction capacitance 10 4 0.1 1 100 10 20 50 100 200 500 f=1mhz t j =25 800 fig.4 - typical forward characteristics instantaneous forward current , amperes instantaneous forward voltage , volts 0.1 1.0 10 100 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 t j =25 pule width 300us 2% duty cycle number of cycles at 60hz peak forward surge current , amperes 1 5 10 50 100 2 20 0 50 100 150 200 250 300 fig.2 - maximum nonrepetitive surge current 8.3 ms single half-sine-wave temperature , fig.1 - forward current derating curve average forward current , amperes 25 75 100 125 150 50 175 single phase half wave 60hz resistive or inductive load 10.0 0 5.0
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